Product Summary
The BSP372 is a SIPMOS small-signal transistor.
Parametrics
BSP372 absolute maximum ratings: (1)Continuous drain current, TA = 28℃, ID: 1.7A; (2)DC drain current, pulsed, TA = 25℃, IDpuls: 6.8A; (3)Gate source voltage, VGS: ±14V; (4)Gate-source peak voltage,aperiodic, Vgs: ±20V; (5)Power dissipation, TA = 25℃, Ptot: 1.8W; (6)Chip or operating temperature, Tj: -55 to + 150℃; (7)Storage temperature, Tstg: -55 to + 150℃.
Features
BSP372 features: (1)N channel; (2)Enhancement mode; (3)Logic Level; (4)Avalanche rated; (5)VGS(th)=0.8 to 2.0V.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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BSP372 E6327 |
MOSFET N-CH 100V 1.7A SOT-223 |
Data Sheet |
Negotiable |
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BSP372 L6327 |
Infineon Technologies |
MOSFET SIPMOS SM-Signal Transistor 100V 1.7A |
Data Sheet |
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