Product Summary
The NTGD1100LT1G is a 8 V, ±3.3 A load switch. The NTGD1100LT1G integrates a P and N-Channel MOSFET in a single package. This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed. The P-Channel device is specifically designed as a load switch using ON Semiconductor state-of-the-art trench technology. The N-Channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The NTGD1100LT1G operates on supply lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V applied to both VIN and VON/OFF.
Parametrics
NTGD1100LT1G maximum ratings: (1)Input Voltage (VDSS, P-Ch) VIN 8.0 V; (2)ON/OFF Voltage (VGS, N-Ch) VON/OFF 8.0 V; (3)Operating Junction and Storage Temperature TJ,TSTG -55 to; (4)150℃; (5)Source Current (Body Diode) IS -1.0 A; (6)ESD Rating, MIL-STD-883D HBM ESD 3.0 kV; (7)Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 ℃.
Features
NTGD1100LT1G features: (1)Extremely Low RDS(on) Load Switch MOSFET; (2)Level Shift MOSFET is ESD Protected; (3)Low Profile, Small Footprint Package; (4)VIN Range 1.8 to 8.0 V; (5)ON/OFF Range 1.5 to 8.0 V; (6)ESD Rating of 3000 V; (7)Pb-Free Package is Available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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NTGD1100LT1G |
ON Semiconductor |
MOSFET 8V +/-3.3A P-Channel w/Level Shift |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
NTGD1100LT1 |
ON Semiconductor |
MOSFET 8V +/-3.3A P-Channel |
Data Sheet |
Negotiable |
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NTGD1100LT1G |
ON Semiconductor |
MOSFET 8V +/-3.3A P-Channel w/Level Shift |
Data Sheet |
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NTGD3149CT1G |
ON Semiconductor |
MOSFET COMP TSOP6 20V 3A TR |
Data Sheet |
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NTGD4161PT1G |
ON Semiconductor |
MOSFET PFET TSOP6 20V 2.3A 160mOhm |
Data Sheet |
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NTGD4167CT1G |
ON Semiconductor |
MOSFET COMP 30V 2.9A 0.090 TSOP6 |
Data Sheet |
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NTGD4169FT1G |
ON Semiconductor |
MOSFET FETKY 30V 2.6A 90MO TSOP6 |
Data Sheet |
Negotiable |
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