Product Summary

The NTB60N06G is a Power MOSFET. It is designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.

Parametrics

NTB60N06G absolute maximum ratings: (1)Drain-to-Source Voltage:60 Vdc; (2)Drain-to-Gate Voltage (RGS = 10 MΩ):60 Vdc; (3)Gate-to-Source Voltage: Continuous:±20Vdc,Non-Repetitive (tp≤10 ms):±30Vdc; (4)Drain Current: Continuous @ TA = 25℃:60Adc,Continuous @ TA = 100℃:42.3Adc, Single Pulse (tp≤10μs):180Apk; (5)Operating and Storage Temperature Range:-55℃ to +175℃.

Features

NTB60N06G feature: Pb-Free Packages are Available.

Diagrams

NTB60N06G internal diagram

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