(China (Mainland))
Product Summary
The K4M563233G-HN75 is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.
Parametrics
Absolute maximum ratings: (1)Voltage on any pin relative to Vss: -1.0 ~ 4.6 V; (2)Voltage on VDD supply relative to Vss: -1.0 ~ 4.6 V; (3)Storage temperature: -55 ~ +150 ℃; (4)Power dissipation: 1.0 W; (5)Short circuit current: 50 mA.
Features
Features: (1)3.0V & 3.3V power supply; (2)LVCMOS compatible with multiplexed address; (3)Four banks operation; (4)MRS cycle with address key programs; (5)EMRS cycle with address key programs; (6)All inputs are sampled at the positive going edge of the system; (7)clock; (8)Burst read single-bit write operation; (9)Special Function Support; (10)DQM for masking; (11)Auto refresh; (12)64ms refresh period (4K cycle); (13)Commercial Temperature Operation (-25℃ ~ 70℃); (14)Extended Temperature Operation (-25℃ ~ 85℃); (15)90Balls FBGA ( -FXXX -Pb, -HXXX -Pb Free).
Diagrams
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 K4M511533E-Y(P)C/L/F |
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K4M511633E-Y(P)C/L/F |
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K4M51163LE-Y(P)C/L/F |
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K4M513233E-M(E)C/L/F |
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K4M51323LE-M(E)C/L/F |
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K4M56163PE-R(B)G/F |
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