(China (Mainland))
Product Summary
The NDS355N is an N-Channel logic level enhancement mode power field effect transistor. It is produced using the proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The NDS355N is particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Parametrics
NDS355N absolute maximum ratings: (1)VDSS Drain-Source Voltage: 30 V; (2)VGSS Gate-Source Voltage - Continuous: 20 V; (3)ID Drain Current - Continuous: ±1.6 A; - Pulsed: 10A; (4)PD Maximum Power Dissipation: 0.5 W; (5)TJ,TSTG Operating and Storage Temperature Range: -55 to 150 ℃.
Features
NDS355N features: (1)1.6A, 30V. RDS(ON) = 0.125Ω @ VGS = 4.5V; (2)Proprietary package design using copper lead frame for superior thermal and electrical capabilities; (3)High density cell design for extremely low RDS(ON); (4)Exceptional on-resistance and maximum DC current capability; (5)Compact industry standard SOT-23 surface mount package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 NDS355N |
Fairchild Semiconductor |
MOSFET DISC BY MFG 2/02 |
Data Sheet |
Negotiable |
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 |
NDS355N_D87Z |
Fairchild Semiconductor |
MOSFET N-Channel FET LL Enhancement |
Data Sheet |
Negotiable |
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