(China (Mainland))
Product Summary
The MG600Q1US51 is a TOSHIBA GTR module, which is a silicon N channel IGBT. The applications of the MG600Q1US51 include high power switching applications, motor control applications.
Parametrics
MG600Q1US51 absolute maximum ratings: (1)Collector-Emitter Voltage: 1200 V; (2)Gate-Emitter Voltage: ±20 V; (3)Collector Current: 600/1200 A; (4)Forward Current: 600 A; (5)Collector Power Dissipation (Tc = 25℃): 4100 W; (6)Junction Temperature: 150 ℃; (7)Storage Temperature Range: -40~125 ℃; (8)Isolation Voltage: 2500 (AC 1min) V; (9)Screw Torque: 3/3 N·m.
Features
MG600Q1US51 features: (1)High Input Impedance; (2)high speed: tf=0.3μs (max)@inductive load; (3)low saturation voltage: VCE(sat)=3.6 V(max); (4)Enhancement Mode; (5)Electrodes are isolated from case.
Diagrams
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