Product Summary

The M29W160EB70N6E is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W160EB70N6E is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.

Parametrics

M29W160EB70N6E absolute maximum ratings: (1)Temperature Under Bias: -50 to 125 ℃;(2)Storage Temperature: -65 to 150 ℃;(3)Input or Output Voltage: -0.6 to Vcc+0.6 V;(4)Supply Voltage: -0.6 to 4 V;(5)Identification Voltage: -0.6 to 13.5V.

Features

M29W160EB70N6E features:(1)supply voltage: Vcc = 2.7 V to 3.6 V for program, erase and read;(2)access times: 70, 90 ns;(3)programming time – 10μs per byte / word typical;(4)35 memory blocks: 1 boot block (top or bottom location) and 2 parameter and 32 main blocks;(5)program / erase controller - embedded byte / word program algorithms;(6)erase suspend and resume modes - read and program another block during erase suspend;(7)unlock bypass program command - faster production / batch programming;(8)temporary block unprotection mode;(9)low power consumption - standby and automatic standby;(10)100,000 program / erase cycles per block.

Diagrams

M29W160EB70N6E logic diagram

Image Part No Mfg Description Data Sheet Download Pricing
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M29W160EB70N6E
M29W160EB70N6E

STMicroelectronics

Flash 2Mx8 or 1Mx16 70ns

Data Sheet

Negotiable 
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