Product Summary

The IS42S32200E-6TL1 is a 512K Bits × 32 Bits × 4 Banks (64-MBIT) synchronous dynamic ram. It achieves highspeed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

Parametrics

IS42S32200E-6TL1 absolute maxing ratings: (1)VDD MAX Maximum Supply Voltage: –1.0 to +4.6 V; (2)VDDQ MAX Maximum Supply Voltage for Output Buffer: –1.0 to +4.6 V; (3)VIN Input Voltage: –1.0 to +4.6 V; (4)VOUT Output Voltage: –1.0 to +4.6 V; (5)PD MAX Allowable Power Dissipation: 1 W; (6)ICS Output Shorted Current: 50 mA; (7)TOPR Operating Temperature Com.: 0 to +70℃; Ind.: –40 to +85℃; (8)TSTG Storage Temperature: –55 to +150℃.

Features

IS42S32200E-6TL1 features: (1)Clock frequency: 200, 166, 143, 133 MHz; (2)Fully synchronous; all signals referenced to a positive clock edge; (3)Internal bank for hiding row access/precharge; (4)Single 3.3V power supply; (5)LVTTL interface; (6)Programmable burst length: (1, 2, 4, 8, full page); (7)Programmable burst sequence: Sequential/Interleave; (8)Self refresh modes; (9)4096 refresh cycles every 16ms or 64 ms.

Diagrams

IS42S32200E-6TL1 block diagram

IS421
IS421

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Data Sheet

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IS422

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Data Sheet

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IS42G32256

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IS42LS32400A

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ISSI

DRAM 256M (16Mx16) 143MHz Mobile SDRAM, 2.5v

Data Sheet

0-240: $4.16
240-720: $4.12
720-1200: $3.98