(China (Mainland))
Product Summary
The IRF7103Q is automotive MOSFET. Additional features of these Automotive qualified HEXFET Power MOSFETs are a 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Parametrics
IRF7103Q absolute maximum ratings: (1)continuous drain current: 3A; (2)Continuous drain current: 2.5A; (3)pulsed drain current: 25A; (4)power dissipation: 2.4W; (5)repetitive avalanche energy: 12mJ; (6)peak diode recovery dv/dt: 12V/ns.
Features
IRF7103Q features: (1)Advanced Process Technology; (2)Dual N-Channel MOSFET; (3)Ultra Low On-Resistance; (4)175°C Operating Temperature; (5)Repetitive Avalanche Allowed up to Tjmax; (6)Automotive [Q101] Qualified.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 IRF7103Q |
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MOSFET N-CH 50V 3A 8-SOIC |
Data Sheet |
Negotiable |
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IRF7103QPBF |
International Rectifier |
MOSFET |
Data Sheet |
Negotiable |
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IRF7103QTRPBF |
International Rectifier |
MOSFET |
Data Sheet |
Negotiable |
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IRF7103QTR |
International Rectifier |
MOSFET N-CH 50V 3A 8-SOIC |
Data Sheet |
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