Product Summary

The FDS6898A is a Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET. It has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. The FDS6898A is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Parametrics

FDS6898A absolute maxing ratings: (1)VDSS Drain-Source Voltage: 20 V; (2)VGSS Gate-Source Voltage: ±12 V; (3)ID Drain Current – Continuous: 9.4 A; – Pulsed: 38 A; (4)PD Power Dissipation for Dual Operation: 2 W; Power Dissipation for Single Operation: 1.6 W; (5)TJ, TSTG Operating and Storage Junction Temperature Range: –55 to +150 ℃.

Features

FDS6898A features: (1)9.4 A, 20 V RDS(ON) = 14 mΩ @ VGS = 4.5 V; RDS(ON) = 18 mΩ @ VGS = 2.5 V; (2)Low gate charge (16 nC typical); (3)High performance trench technology for extremely low RDS(ON); (4)High power and current handling capability.

Diagrams

FDS6898A diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDS6898A
FDS6898A
Fairchild Semiconductor
MOSFET SO-8
Data Sheet
0-1: $0.75
1-25: $0.67
25-100: $0.54
100-250: $0.46
FDS6898A_NF40
FDS6898A_NF40
Fairchild Semiconductor
MOSFET 20V 9.4A DUAL NCH POWERTRENCH
Data Sheet
Negotiable 
FDS6898AZ
FDS6898AZ
Fairchild Semiconductor
MOSFET SO-8
Data Sheet
0-1: $0.73
1-25: $0.65
25-100: $0.52
100-250: $0.45
FDS6898AZ_F085
FDS6898AZ_F085
Fairchild Semiconductor
MOSFET N-CHANNEL MOSFET
Data Sheet
0-1730: $0.54
1730-2500: $0.50
2500-5000: $0.48
5000-10000: $0.47