Product Summary
The 2SB1732 is a Low frequency amplifier.
Parametrics
2SB1732 absolute maximum ratings: (1)Collector-base voltage VCBO: -15V; (2)Collector-emitter voltage VCEO: -12V; (3)Emitter-base voltage VEBO: -6V; (4)Power dissipation PC: 400mW*2; (5)Junction temperature: 150℃; (6)Range of storage temperature: -55 to +150℃.
Features
2SB1732 features: (1)A collector current is large.; (2)Collector saturation voltage is low. VCE(sat)≤ -200mV, at IC = -500mA / IB = -25mA.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||||
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2SB1732TL |
ROHM Semiconductor |
Transistors Bipolar (BJT) 12V 1.5A PNP LOW |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||||||||
2SB1000 |
Other |
Data Sheet |
Negotiable |
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2SB1000A |
Other |
Data Sheet |
Negotiable |
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2SB1001 |
Other |
Data Sheet |
Negotiable |
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2SB1011 |
TRANS PNP LF 400VCEO .1A TO-126 |
Data Sheet |
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2SB1016A |
Other |
Data Sheet |
Negotiable |
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2SB1020A(F) |
Toshiba |
Transistors Bipolar (BJT) HFE 2000(min) VCE-3V Vcbo -100V DC -7A |
Data Sheet |
Negotiable |
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