S29AL008D70MFI010

Product Summary

The S29AL008D70MFI010 is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The S29AL008D70MFI010 is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. For more information, refer to publication number 21536. The word-wide data (x16) appears on DQ15-DQ0; the byte-wide (x8) data ap­pears on DQ7-DQ0. The S29AL008D70MFI010 requires only a single, 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device. This device is manufactured using Spansions 200nm process technology, and of­fers all the features and benefits of the Am29LV800B, which was manufactured using 0.32 μm process technology. The standard device offers access times of 70, 90, and 120 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus conten­tion the device contains separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.

Parametrics

S29AL008D70MFI010 absolute maximum ratings: (1)Industrial (I)Devices Ambient Temperature (TA): -40℃ to +85℃ Extended (N)Devices Ambient Temperature (TA): -40℃ to +125℃; (2)VCC Supply Voltages VCC for regulated voltage range: +3.0 V to +3.6 V; (3)VCC for full voltage range: +2.7 V to +3.6 V; (4)Storage Temperature Plastic Packages: -65℃ to +150℃; (5)Ambient Temperature with Power Applied: -65℃ to +125℃; (6)Voltage with Respect to Ground VCC: -0.5 V to +4.0 V; (7)A9, OE#, and RESET#: -0.5 V to +12.5 V; (8)All other pins: -0.5 V to VCC+0.5 V; (9)Output Short Circuit Current: 200 mA.

Features

S29AL008D70MFI010 features: (1)A hardware method of locking a sector to prevent any program or erase operations within that sector; (2)Sectors can be locked insystem or via programming equipment; (3)Temporary Sector Unprotect feature allows code changes in previously locked sectors; (4)Access times as fast as 55 ns; (5)Extended temperature range (40℃ to +125℃); (6)200 nA Automatic Sleep mode current; (7)200 nA standby mode current; (8)7 mA read current; (9)15 mA program/erase current; (10)2.7 to 3.6 volt read and write operations for batterypowered applications; (11)Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors; (12)Embedded Program algorithm automatically writes and verifies data at specified addresses.

Diagrams