(China (Mainland))
Product Summary
The KM6161000BLTI-7L is a CMOS static RAM. It is fabricated by SAMSUNG advanced CMOS process technology. The KM6161000BLTI-7L supports various operating temperature ranges and have various package types for user flexibility of system design. The KM6161000BLTI-7L also supports low data retention voltage for battery back-up operation with low data retention current.
Parametrics
KM6161000BLTI-7L absolute maximum ratings: (1)Voltage on any pin relative to Vss VIN,VOUT: -0.5 to Vcc+0.5 V; (2)Voltage on Vcc supply relative to Vss VCC: -0.5 to 7.0 V; (3)Power Dissipation PD: 1.0 W; (4)Storage temperature TSTG: -65 to 150 ℃; (5)Operating Temperature TA: -40 to 85 ℃.
Features
KM6161000BLTI-7L features: (1)Process Technology: Poly Load; (2)Organization: 64K x16; (3)Data Byte Control: LB=I/O1~8, UB=I/O9~16; (4)Power Supply Voltage: 4.5~5.5V; (5)Low Data Retention Voltage: 2V(Min); (6)Three state output and TTL Compatible; (7)Package Type: 44-TSOP2-400F/R.
Diagrams
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KM611001L |
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KM6161002A |
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KM6161002B |
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KM6161002C |
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