(China (Mainland))
Product Summary
The IRF7103QTRPBF is a HEXFET Power MOSFET. The device utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of IRF7103QTRPBF are 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating.
Parametrics
IRF7103QTRPBF absolute maximum ratings: (1)Continuous Drain Current, VGS @ 4.5V, ID @ TA = 25℃: 3.0A; (2)Continuous Drain Current, VGS @ 4.5V, ID @ TA = 70℃: 2.5A; (3)Pulsed Drain Current, IDM: 25A; (4)Power Dissipation, PD @TA = 25℃:2.4W; (5)Linear Derating Factor: 16W/℃; (6)Gate-to-Source Voltage, VGS: ±20V; (7)Single Pulse Avalanche Energy, EAS: 22mJ; (8)Avalanche Current, Iar: 2A; (9)Operating Junction and Storage Temperature Range, TJ/TSTG: -55 to 175℃.
Features
IRF7103QTRPBF features: (1)Advanced Process Technology; (2)Dual N-Channel MOSFET; (3)Ultra Low On-Resistance; (4)175℃ Operating Temperature; (5)Repetitive Avalanche Allowed up to Tjmax; (6)Lead-Free.
Diagrams
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 IRF7103QTRPBF |
International Rectifier |
MOSFET |
Data Sheet |
Negotiable |
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