(China (Mainland))
Product Summary
The HUFA76413DK8T is an N-Channel Logic Level UltraFET Power MOSFET. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. The HUFA76413DK8T is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products. The applications of the HUFA76413DK8T include: Motor and Load Control, Powertrain Management.
Parametrics
HUFA76413DK8T absolute maximum ratings: (1)VDSS Drain to Source Voltage: 60 V; (2)VGS Gate to Source Voltage: ±16 V; (3)ID Drain Current Continuous (TC = 25℃, VGS = 10V): 5.1 A; Continuous (TC = 25℃, VGS = 5V): 4.8 A; Continuous (TC = 125℃, VGS = 5V, RθJA = 228℃/W): 1 A; (4)EAS Single Pulse Avalanche Energy: 260 mJ; (5)PD Power dissipation: 2.5 W; Derate above 25℃: 0.02 W/℃; (6)TJ, TSTG Operating and Storage Temperature: -55 to 150 ℃.
Features
HUFA76413DK8T features: (1)150℃ Maximum Junction Temperature; (2)UIS Capability (Single Pulse and Repetitive Pulse); (3)Ultra-Low On-Resistance rDS(ON) = 0.049Ω VGS = 10V; (4)Ultra-Low On-Resistance rDS(ON) = 0.056Ω VGS = 5V.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 HUFA76413DK8T |
Fairchild Semiconductor |
MOSFET 20a 60V 0.056 Ohm Logic Level N-Ch |
Data Sheet |
Negotiable |
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HUFA76413DK8T_F085 |
Fairchild Semiconductor |
MOSFET 60V Dual N-Channel Logic Level UltraFER |
Data Sheet |
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