(China (Mainland))
Product Summary
The FDS5170N7 is an N-Channel MOSFET designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low side synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. The applications of the FDS5170N7 include Synchronous rectifier and DC/DC converter.
Parametrics
FDS5170N7 absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 60 V; (2)VGSS, Gate-Source Voltage: ±20 V; (3)ID, Drain Current – Continuous: 10.6 A; Pulsed: 50 A; (4)PD, Power Dissipation for Single Operation: 3.0 W; (5)TJ, TSTG, Operating and Storage Junction Temperature Range: –55 to +150℃.
Features
FDS5170N7 features: (1)10.6 A, 60 V. RDS(ON) = 12 mΩ @ VGS = 10 V; RDS(ON) = 15 mΩ @ VGS = 6.0 V; (2)High performance trench technology for extremely low RDS(ON); (3)High power and current handling capability; (4)Fast switching, low gate charge (51nC typical); (5)FLMP SO-8 package: Enhanced thermal performance in industry-standard package size.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDS5170N7 |
Fairchild Semiconductor |
MOSFET 60V N-Ch PowerTrench |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
FDS5170N7 |
Fairchild Semiconductor |
MOSFET 60V N-Ch PowerTrench |
Data Sheet |
Negotiable |
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FDS5351 |
Fairchild Semiconductor |
MOSFET 60V N-Channel PowerTrench |
Data Sheet |
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FDS5670 |
Fairchild Semiconductor |
MOSFET SO-8 N-CH 60V |
Data Sheet |
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FDS5672 |
Fairchild Semiconductor |
MOSFET 60V 12A 10 OHM NCH POWER TRENCH MOSFET |
Data Sheet |
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FDS5680 |
Fairchild Semiconductor |
MOSFET SO-8 N-CH 60V |
Data Sheet |
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FDS5682 |
Fairchild Semiconductor |
MOSFET 60V N-CH. FET 20 MO SO8 TR |
Data Sheet |
Negotiable |
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