Product Summary
The 1N5806 is a 50-150 volts fast recovery rectifier chip.
Parametrics
1N5806 absolute maximum ratings: (1)Reverse Current Rated VR, TC = 25℃ IR: 1 mA; (2)Reverse Current Rated VR, TC = 100℃ IR: 50 mA; (3)Forward Voltage Drop IF = 1A, TC = 25℃ VF: 875 Volts; (4)Junction Capacitance @ VR = 10V Cj: 25 Pf.
Features
1N5806 features: (1)Chip Outline Dimensions: 41 x 41 mils; (2)Chip Thickness: 8 to 12 mils; (3)Anode Metallization: Aluminum; (4)Metallization Thickness: 50,000Nominal; (5)Bonding Area: 23 x 23 mils Min.; (6)Back Metallization: Gold; (7)Junction Passivated with Thermal Silicon Dioxide - Planar Design; (8)Backside Available with Solderable Ag Backside as JANHCF or JANKCF.
Diagrams
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![]() 1N5806 |
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![]() DIODE 150V 2.5A 25NS AXIAL |
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![]() 1N5806S |
![]() Other |
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![]() Negotiable |
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